| Material parameter | |
| Formula: | Al2O3 |
| Crystal growth | |
| @Growth method: | Czochralski-technique |
| @Growth direction: | (0001) |
| @Max.diameter: | 4inch |
| Crystallographic properties | |
| @Structure:hexagonal: | a=0.477nm c=1.304nm |
| @Twin structure: | twinfree |
| @Colour: | colourless |
| Physical properties | |
| @Density: | 3.98gcm-3 |
| @Melting point: | 2052 |
| @Thermal expansion: | par.c:@@5.4~10-6K-1 parp.c:@@6.2~10-6K-1 |
| @Dielectric constant: | par.c:@@@@@@@9.4 perp.c:@@@@@@11.5 |
| @Loss tangent: | par.c:@@@@3~10-5 parp.c:@@@@3~10-5 |
| Substrate parameter | |
| Orientation: | (0001); (1012); (1102) other orientations on request |
| Tolerance of orientation: | maximum1;typical<40' |
| Dimension: | standard: 10~10o2; 10~5o2; 25.4~25.4o2 1inch , 2inch, 3inch dia. other dimension on request |
| Tolerance of dimension: | +0/-0.05o |
| Thickness: | standard :@@0.5o, 1o
other thickness0.1o on request |
| Tolerance of thickness: | +0/-0.02o |
| Polish: | one- or both side epipolished |
| Surface quality: | scratch- and wiperfree by magnification of 800 measured with Kugler KMS Interferometermicroscope each charge with certification |
| Parallelity: | typical.<10' |
| Flatness: | typ.<1Κm/10o (test region 98%) |
| Roughness: (Ιcutoff =0.08mm) |
Ra:typ.<0.8nm Rq:typ.<1.0nm Rt:typ.<4.0nm |
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